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PD - 95053A
IRFP3710PBF
l l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free
HEXFET(R) Power MOSFET
D
VDSS = 100V RDS(on) = 0.025
G S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247AC package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO247AC contribute to its wide acceptance throughout the industry.
ID = 57A
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
57 40 180 200 1.3 20 530 28 20 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
0.50
Max.
0.75 62
Units
C/W
5/26/05
IRFP3710PBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 100 2.0 20 Typ. 0.12 14 59 58 48 4.5 7.5 3000 640 330 Max. Units Conditions V V GS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.025 V GS = 10V, ID = 28A 4.0 V V DS = V GS, ID = 250A S V DS = 25V, ID = 28A 25 V DS = 100V, VGS = 0V A 250 V DS = 80V, VGS = 0V, TJ = 150C 100 V GS = 20V nA -100 V GS = -20V 190 ID = 28A 26 nC V DS = 80V 82 V GS = 10V, See Fig. 6 and 13 V DD = 50V ID = 28A ns RG = 2.5 RD = 1.7, See Fig. 10 Between lead, 6mm (0.25in.) nH G from package and center of die contact V GS = 0V pF V DS = 25V = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
IS
I SM
VSD t rr Q rr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 57 showing the A G integral reverse 180 S p-n junction diode. 1.3 V TJ = 25C, IS = 28A, VGS = 0V 210 320 ns TJ = 25C, IF = 28A 1.7 2.6 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by Starting TJ = 25C, L = 1.4mH
max. junction temperature. ( See fig. 11 )
ISD 28A, di/dt 460A/s, VDD V(BR)DSS,
T J 175C
RG = 25, IAS = 28A. (See Figure 12)
Pulse width 300s; duty cycle 2%.
IRFP3710PBF
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
I , Drain-to-Source Current (A) D
100
I , Drain-to-Source Current (A) D
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
4.5V
10
10
4.5V
1 0.1
20s PULSE WIDTH TC = 25C
1 10
A
100
1 0.1
20s PULSE WIDTH TC = 175C
1 10
A
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D = 46A
I D , Drain-to-Source Current (A)
2.5
TJ = 25C
100
2.0
TJ = 175C
1.5
10
1.0
0.5
1 4 5 6 7
V DS = 50V 20s PULSE WIDTH
8 9 10
A
0.0 -60 -40 -20 0 20 40 60
VGS = 10V
80 100 120 140 160 180
A
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRFP3710PBF
6000
5000
C, Capacitance (pF)
4000
Ciss
3000
Coss
2000
V GS , Gate-to-Source Voltage (V)
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd
20
I D = 28A V DS = 80V V DS = 50V V DS = 20V
16
12
8
1000
Crss
4
0 1 10 100
A
0 0 40 80
FOR TEST CIRCUIT SEE FIGURE 13
120 160 200
A
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
I D , Drain Current (A)
100
100
10s
TJ = 175C TJ = 25C
100s
10
10
1ms
10ms
1 0.4 0.8 1.2 1.6
VGS = 0V
A
2.0
1 1
TC = 25C TJ = 175C Single Pulse
10 100
1000
A
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRFP3710PBF
60
V DS VGS RG
RD
50
D.U.T.
+
ID , Drain Current (A)
40
-VDD
10V
30
Pulse Width 1 s Duty Factor 0.1 %
20
Fig 10a. Switching Time Test Circuit
VDS 90%
25 50 75 100 125 150 175
10
0
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50
0.20 0.1 0.10 0.05 0.02 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1
0.01 0.00001
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFP3710PBF
EAS , Single Pulse Avalanche Energy (mJ)
1200
TOP
1000
15V
BOTTOM
ID 11A 20A 28A
VDS
L
DRIVER
800
RG
20V
D.U.T
IAS tp
600
+ V - DD
A
400
0.01
Fig 12a. Unclamped Inductive Test Circuit
200
0
VDD = 25V
25 50 75 100 125 150
175
A
V(BR)DSS tp
Starting TJ , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10 V
QGS
QGD
VGS
3mA
D.U.T.
+ V - DS
VG
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRFP3710PBF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
IRFP3710PBF
TO-247AC Package Outline
15.90 (.626) 15.30 (.602) -B3.65 (.143) 3.55 (.140) -A0.25 (.010) M D B M 5.50 (.217) 20.30 (.800) 19.70 (.775) 1 2 3 -C14.80 (.583) 14.20 (.559) 4.30 (.170) 3.70 (.145) 0.80 (.031) 3X 0.40 (.016) C AS 2.60 (.102) 2.20 (.087)
Dimensions are shown in millimeters (inches)
-D5.30 (.209) 4.70 (.185)
2.50 (.089) 1.50 (.059) 4
2X
5.50 (.217) 4.50 (.177)
NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-247-AC.
2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X
1.40 (.056) 3X 1.00 (.039) 0.25 (.010) M 3.40 (.133) 3.00 (.118)
LEAD ASSIGNMENTS Hexfet IGBT 1 -LEAD ASSIGNMENTS Gate 1 - Gate 1 - GATE2 - Collector 2 - Drain 2 - DRAIN 3 - Source 3 - Emitter 3 - SOURCE 4 - Drain DRAIN - Collector 4 4-
TO-247AC Part Marking Information
EXAMPLE: T HIS IS AN IRFPE30 WIT H ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H"
Note: "P" in assembly line position indicates "Lead-Free"
INT ERNATIONAL RECT IFIER LOGO ASSEMBLY LOT CODE
PART NUMBER
IRFPE30
56 035H 57
DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/05
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/

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